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| New Product Si1069X Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.184 at VGS = - 4.5 V 0.268 at VGS = - 2.5 V ID (A) - 0.94 4.23 - 0.78 Qg (Typ.) FEATURES * Halogen-free Option Available * TrenchFET(R) Power MOSFET * 100 % Rg Tested RoHS COMPLIANT APPLICATIONS * Load Switch for Portable Devices SC-89 (6-LEADS) D 1 6 D S Marking Code Y XX YY Lot Traceability and Date Code Part # Code D 2 5 D G G 3 4 S Top View D Ordering Information: Si1069X-T1-E3 (Lead (Pb)-free) SI1069X-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C) Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 C TA = 70 C TA = 25 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit - 20 12 - 0.94b, c - 0.75b, c -8 - 0.2b, c 0.236b, c 0.151b, c - 55 to 150 Unit V A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, b Notes: a. Based on TA = 25 C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. t5s Steady State Symbol RthJA Typical 440 540 Maximum 530 650 Unit C/W Document Number: 70442 S-80641-Rev. B, 24-Mar-08 www.vishay.com 1 New Product Si1069X Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time ISM VSD trr Qrr ta tb IF = - 0.64 A, di/dt = 100 A/s IS = - 0.64 A - 0.8 19 6.65 7 12 8 - 1.2 28.5 10 ns A V nC VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = - 10 V, RL = 13.3 ID - 0.75 A, VGEN = - 4.5 V, Rg = 1 f = 1 MHz VDS = - 10 V, VGS = - 5 V, ID = - 0.94 A VDS = - 10 V, VGS = - 4.5 V, ID = - 0.94 A VDS = - 10 V, VGS = 0 V, f = 1 MHz VGS = 0 V, ID = - 250 A ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 12 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 85 C VDS = 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 0.94 A VGS = - 2.5 V, ID = - 0.78 A VDS = - 10 V, ID = - 0.94 A -8 0.153 0.218 4 308 78 59 4.57 4.23 0.71 1.67 9 19 31 23 7 13.5 28.5 47 34.5 10.5 ns 6.86 6.35 nC pF 0.184 0.268 - 0.6 - 20 - 16.7 2.95 - 1.5 100 -1 - 10 V mV/C V nA nA A A S Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70442 S-80641-Rev. B, 24-Mar-08 New Product Si1069X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 8 VGS = 5 thru 3.5 V VGS = 3 V 3.0 2.4 6 I D - Drain Current (A) VGS = 2.5 V 4 I D - Drain Current (A) 1.8 1.2 TC = 25 C 0.6 TC = 125 C TC = - 55 C 2 VGS = 2 V 0 0 1 2 3 4 5 0.0 0.0 0.6 1.2 1.8 2.4 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.5 600 Transfer Characteristics R DS(on) - On-Resistance () 0.4 C - Capacitance (pF) 500 400 Ciss 300 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V 0.1 200 Coss 100 Crss 0.0 0 2 4 ID - Drain Current (A) 6 8 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 ID = 0.94 A VGS - Gate-to-Source Voltage (V) 4 VDS = 10 V 3 VDS = 16 V 2 R DS(on) - On-Resistance (Normalized) 1.4 1.6 Capacitance VGS = 4.5 V, ID = 0.94 A 1.2 VGS = 2.5 V, ID = 0.78 A 1.0 1 0.8 0 0 1 2 3 4 5 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 70442 S-80641-Rev. B, 24-Mar-08 www.vishay.com 3 New Product Si1069X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 10 0.4 ID = 0.94 A R DS(on) - On-Resistance () I S - Source Current (A) 0.3 1 0.2 TA = 125 C TJ = 150 C 0.1 TJ = 25 C 0.1 TA = 25 C 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.3 On-Resistance vs. Gate-to-Source Voltage 5 1.2 ID = 250 A 1.1 VGS(th) (V) Power (W) - 25 0 25 50 75 100 125 150 4 3 1.0 2 0.9 0.8 1 0.7 - 50 0 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (C) Threshold Voltage 10 Limited by RDS(on)* Single Pulse Power 10 ms 100 ms 1s 10 s ID - Drain Current (A) 1 0.1 DC 0.01 TA = 25 C Single Pulse 0.001 0.1 * VGS BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 70442 S-80641-Rev. B, 24-Mar-08 New Product Si1069X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.1 0.2 0.1 0.05 0.01 0.02 PDM t1 Notes: 0.001 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 540 C/W Single Pulse 0.0001 10-4 10-3 10-2 10-1 1 10 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70442. Document Number: 70442 S-80641-Rev. B, 24-Mar-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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